Semiconductor Process
제공가능공정
ASE에서 제공가능한 공정을 소개합니다.
Contact aligner, Stepper, E-beam, Nanoimprint etc.
2"~12" Various process capability depends on pattern resolution.
Dry etching(RIE, ICP), Wet etching, lift-off etc.
2"~8" Various process capability depends on pattern resolution.
Various CMP(Metals, Insulations, Substrates), Various grinding(Substrates).
~12" Optimized process proposal from slurry composition level and prebonding surface control for CMOS image sensor, RF device, various MEMS and 3D integrated devices etc.
Low temp plasma bonding(Fusionbonding), Room Temp bonding (Surface activation bonding), Eutectic bonding(Solderbonding), Metaldiffusti on bonding, Glassfrit bonding, Adhesive bonding.
2"~12" Various bonding methods are capable and meet with the needs of room temperature bonding.
Sputtering, Evaporation, CVD, ALD, Electroplating etc.
2"~12" Over 120 kinds of on hand target at sputtering.
Ion implatation, Dicing, Back Grinding, Edge Trimming etc.